Interdiffusion at Ge/Si Interfaces Studied with AES Depth Profiling
نویسندگان
چکیده
منابع مشابه
Effects of interdiffusion on the band alignment of GeSi dots
The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperatureand excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing ...
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ژورنال
عنوان ژورنال: Journal of Surface Analysis
سال: 2002
ISSN: 1341-1756,1347-8400
DOI: 10.1384/jsa.9.428